Integrated circuit memory devices having impurity-doped dielectric regions therein and methods of forming same
AssigneeSamsung Electronics Co., Ltd.
InventorsWoo Jin Jang, Young Jin Noh, Jun Kyu Yang, Bio Kim, Kyong Won An
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Abstract
An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.
Claims21
1-11. (canceled)
A semiconductor device, comprising:
- a blocking dielectric disposed on a lower region;
- a stack structure comprising an interlayer insulating layer and a gate electrode facing the blocking dielectric;
- a lateral impurity region disposed within a boundary region between the interlayer insulating layer and the blocking dielectric;
- and
- a lower impurity region disposed within a boundary region between the lower region and the blocking dielectric.
A semiconductor device comprising:
- memory cell vertical structures disposed on a substrate, each of the memory cell vertical structures comprising a first gate dielectric;
- a stack structure disposed on the substrate, and comprising an interlayer insulating layer and a gate electrode facing the memory cell vertical structures;
- and
- a lateral impurity region disposed within a boundary region between the memory cell vertical structures and the stack structure.
A semiconductor device comprising:
- a lower region;
- a blocking dielectric disposed on the lower region;
- a stack structure comprising an interlayer insulating layer and a gate electrode facing the blocking dielectric;
- and
- a lower impurity region disposed within a boundary region between the lower region and the blocking dielectric.
Dependencies are inferred from the claim text.