Memory device and method of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsPei-Ci Jhang, Chi-Pin Lu
Life of this patent
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Abstract
Provided is a memory device including a substrate, a stack layer, a channel structure, a charge storage structure, a silicon nitride layer, and a buffer oxide layer. The stack layer is disposed over the substrate. The stack layer includes a plurality of dielectric layers and a plurality of conductive layers stacked alternately. The channel structure penetrates through the stack layer. The charge storage structure surrounds a sidewall of the channel structure. The silicon nitride layer surrounds the conductive layers. The buffer oxide layer is disposed between the conductive layers and the silicon nitride layer.
Claims20
A memory device comprising:
- a stack layer disposed on a substrate, wherein the stack layer comprises a plurality of dielectric layers and a plurality of conductive layers stacked alternately;
- a channel structure penetrating through the stack layer;
- a charge storage structure surrounding a sidewall of the channel structure;
- a silicon nitride layer surrounding the conductive layers;
- and
- a buffer oxide layer disposed between the conductive layers and the silicon nitride layer.
A method of manufacturing a memory device, comprising:
- forming a stack layer on a substrate, wherein the stack layer comprises a plurality of first materials and a plurality of second materials stacked alternately;
- forming a plurality of openings in the stack layer, the openings exposing a portion of the substrate;
- forming a charge storage structure in each of the openings;
- forming a channel structure in each of the openings, such that the charge storage structure surrounds a sidewall of the channel structure;
- forming a slit in the stack layer between two adjacent channel structures, the slit exposing another portion of the substrate;
- performing an etching process to remove the second materials to form a plurality of gaps between the first materials;
- forming a silicon nitride layer on the substrate, the silicon nitride layer conformally covering a surface of the gaps;
- forming a buffer oxide layer on the silicon nitride layer;
- and
- forming conductive layers in the gaps, such that the buffer oxide layer is located between the conductive layers and the silicon nitride layer.
Dependencies are inferred from the claim text.