Semiconductor structure and method for forming the same
AssigneeMacronix International Co., Ltd.
InventorTing-Feng Liao
Life of this patent
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Abstract
A semiconductor structure includes a plurality of sub-array structures separated from each other by a plurality of isolation structures. The semiconductor structure further includes a three-dimensional array of memory cells. The memory cells include a plurality of cell groups disposed in the sub-array structures, respectively. The semiconductor structure further includes a plurality of conductive structures. Each of the conductive structures includes a plurality of conductive columns correspondingly disposed in each of the isolation structures along an extending direction of the isolation structures. The conductive columns penetrate through the each of the isolation structures. Each of the conductive columns has a circular cross section.
Claims20
A semiconductor structure, comprising:
- a plurality of sub-array structures separated from each other by a plurality of isolation structures;
- a three-dimensional array of memory cells, wherein the memory cells comprise a plurality of cell groups disposed in the sub-array structures, respectively;
- and
- a plurality of conductive structures, wherein each of the conductive structures comprises a plurality of conductive columns correspondingly disposed in each of the isolation structures along an extending direction of the isolation structures, the conductive columns penetrating through the each of the isolation structures, and each of the conductive columns has a circular cross section.
A method for forming a semiconductor structure, comprising:
- providing an initial structure, wherein the initial structure comprises a plurality of sub-array structures separated from each other by a plurality of isolation regions, each of the sub-array structures comprises a stack and a plurality of active structures penetrating through the stack, and each of the active structures comprises a channel layer and a memory layer formed between the channel layer and the stack;
- forming a plurality of isolation structures in the isolation regions, respectively;
- and
- forming a plurality of conductive columns in the isolation structures, the conductive columns penetrating through the isolation structures, each of the conductive columns having a circular cross section.
Dependencies are inferred from the claim text.