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US 2019/0157288 A1Published application
Method for manufacturing three-dimensional memory structure, three-dimensional memory structure, three-dimensional memory device and electronic apparatus
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZONGLIANG HUO, Wenbin Zhou, Lei Zhang, Peng Yang
Life of this patent
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Abstract
A method for manufacturing a three-dimensional (3D) memory structure and a 3D memory structure are disclosed. A recess is formed on a substrate, a 3D memory component is formed with a bottom in the recess, and then, a peripheral circuit is formed on the substrate outside the recess.
Claims16
A method for manufacturing a three-dimensional (3D) memory structure, comprising:
- forming a recess on a substrate;
- forming a 3D memory component with a bottom located in the recess;
- and
- forming a peripheral circuit on the substrate outside the recess.
1 more element
A 3D memory structure, comprising:
- a substrate having a recess;
- a 3D memory component with a bottom disposed in the recess of the substrate;
- and
- a peripheral circuit disposed on the substrate outside the recess.
1 more element
Dependencies are inferred from the claim text.