Nonvolatile memory device and method of manufacturing the same

A method of manufacturing a nonvolatile memory device, the method comprising:

• forming one or more peripheral transistors on a portion of a lower substrate;
• forming a lower insulating layer covering the one or more peripheral transistors;
• forming one or more contact plugs passing through the lower insulating layer and vertically extending from the one or more peripheral transistors;
• forming, on the lower insulating layer, an upper substrate that includes a metal layer electrically connected to the one or more contact plugs;
• and
• forming a memory cell array that includes a plurality of gate conductive layers stacked on the upper substrate.

A nonvolatile memory device, comprising:

• a first semiconductor layer, the first semiconductor layer including:
• an upper substrate,
• a plurality of pillars vertically extending from the upper substrate, and
• a memory cell array that includes a plurality of gate conductive layers stacked on the upper substrate along side walls of the plurality of pillars;
• and
• a second semiconductor layer under the first semiconductor layer, the second semiconductor layer including:
• a lower substrate on which a common source line driver configured to output a common source voltage to the memory cell array is formed,
• a lower insulating layer between the lower substrate and the upper substrate, and
• one or more contact plugs passing through at least a portion of the lower insulating layer and electrically connecting the common source line driver and the upper substrate.