Three-dimensional semiconductor memory devices and methods of fabricating the same

A three-dimensional semiconductor memory device, comprising:

• a substrate including a first region and a second region;
• an electrode structure including electrodes vertically stacked on the substrate;
• a plurality of first vertical structures extending into the electrode structure on the first region;
• and
• a plurality of second vertical structures extending into the electrode structure on the second region,
• wherein each of the first vertical structures comprises:
• a vertical semiconductor pattern extending into the electrode structure;
• and
• a first data storage pattern between the vertical semiconductor pattern and the electrode structure, and
• wherein each of the second vertical structures comprises:
• an insulation structure extending into the electrode structure;
• and
• a second data storage pattern between the insulation structure and the electrode structure,
• a bottom surface of the insulation structure being lower than a bottom surface of the vertical semiconductor pattern and a bottom surface of the second data storage pattern.