Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device

A semiconductor device comprising:

• a plurality of transistors on a semiconductor substrate, each of the plurality of transistors including a gate structure and an impurity region;
• a first interlayer insulation layer on the transistor;
• a plurality of contact plugs, each of the plurality of contact plugs penetrating the first interlayer insulation layer and electrically connected to corresponding impurity region;
• a plurality of bottom electrodes passing through a supporting layer on the first interlayer insulation layer, each of the plurality of bottom electrodes electrically connected to corresponding contact plug;
• a dielectric layer -on each of the plurality of bottom electrodes;
• and
• a top electrode on the dielectric layer,
• wherein the supporting layer includes a through-hole at a position corresponding to a centroid of a triangle formed by three closest bottom electrodes.