Buried word line of a dynamic random access memory and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Chun-Hsien Lin, Fu-Che Lee
Life of this patent
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Abstract
A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a first doped region in a substrate; removing part of the first doped region to form a trench in the substrate; forming a gate structure in the trench; and forming a barrier structure between the gate structure and the first doped region.
Claims20
A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM), comprising:
- forming a first doped region in a substrate;
- removing part of the first doped region to form a trench in the substrate;
- forming a gate structure in the trench;
- and
- forming a barrier structure between the gate structure and the first doped region.
A buried word line (BWL) of a dynamic random access memory (DRAM), comprising:
- a trench in a substrate;
- a doped region adjacent to two sides of the trench;
- a gate structure in the trench, wherein the gate structure comprises:
- a conductive layer in the trench;
- a gate dielectric layer between the conductive layer and the substrate;
- and
- a barrier structure between the gate structure and the doped region, wherein a topmost surface of the barrier structure is even with a topmost surface of the gate dielectric layer and the barrier structure and the gate dielectric layer comprise different heights.
A buried word line (BWL) of a dynamic random access memory (DRAM), comprising:
- a trench in a substrate;
- a first doped region adjacent to two sides of the trench;
- a gate structure in the trench, wherein the gate structure comprises:
- a conductive layer in the trench;
- a gate dielectric layer between the conductive layer and the substrate;
- and
- a barrier structure in the substrate adjacent to two sides of the trench, wherein the barrier structure overlaps the first doped region and the substrate.
Dependencies are inferred from the claim text.