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US 2019/0157272 A1Published application
Complementary transistor and semiconductor device
AssigneeSony Corporation
InventorsHidetoshi OISHI, Koichi MATSUMOTO, Kazuyuki TOMIDA
Life of this patent
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Abstract
A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 211,212 respectively.
Claims31
A complementary transistor comprising:
- a first transistor including:
- a first control electrode;
- a first active region located below the first control electrode and formed by layering a first A layer and a first B layer;
- a first insulation layer provided between the first control electrode and the first active region;
- a first A extension layer extending from one end of the first active region and constituted of the first A layer;
- a first B extension layer extending from the other end of the first active region and constituted of the first B layer;
- and
- a second transistor including:
- a second control electrode;
- a second active region located below the second control electrode and formed by layering a second A layer and a second B layer;
- a second insulation layer provided between the second control electrode and the second active region;
- a second A extension layer extending from one end of the second active region and constituted of the second A layer;
- and
- a second B extension layer extending from the other end of the second active region and constituted of the second B layer,
- wherein
- a first surface region provided in a base and having a first conductivity type corresponds to the first A layer and the first A extension layer,
- the first B layer has a property as a second conductivity type different from the first conductivity type,
- the first B extension layer is provided on a first insulation region provided in the base,
- a second surface region provided in the base and having the second conductivity type corresponds to the second A layer and the second A extension layer,
- the second B layer has a property as the first conductivity type, and
- the second B extension layer is provided on a second insulation region provided in the base.
18 more elements
A complementary transistor comprising:
- a first transistor including:
- a first control electrode;
- a first active region located below the first control electrode and formed;
- a first insulation layer provided between the first control electrode and the first active region;
- a first A extension region extending from one end of the first active region;
- and
- a first B extension region extending from the other end of the first active region;
- and
- a second transistor including:
- a second control electrode;
- a second active region located below the second control electrode;
- a second insulation layer provided between the second control electrode and the second active region;
- a second A extension region extending from one end of the second active region;
- and
- a second B extension region extending from the other end of the second active region,
- wherein
- a first surface region provided in a base and having a first conductivity type corresponds to the first A extension region,
- the first B extension region has a property as a second conductivity type different from the first conductivity type and is provided on a first insulation region provided in the base,
- the first active region is provided on the first insulation region,
- a second surface region provided in the base and having the second conductivity type corresponds to the second A extension region,
- the second B extension region has a property as the first conductivity type and is provided on a second insulation region provided in the base, and
- the second active region is provided on the second insulation region.
19 more elements
Dependencies are inferred from the claim text.