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US 2019/0157267 A1Published application
Finfets with controllable and adjustable channel doping
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
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Abstract
A method of forming features of a finFET structure includes forming fins on a surface of a substrate. A first liner is formed around each fin and a shallow trench isolation region is formed around each fin. A dopant layer is implanted in each fin. A portion of the shallow trench isolation region is etched from each fin. A first portion of the structure is blocked and the first liner replaced with a second liner in a second portion of the structure.
Claims20
A finFET structure, comprising:
- a plurality of fins located on a surface of a substrate;
- a first liner disposed around each fin in a high threshold voltage region of the structure, with a dopant layer implanted into each fin;
- and
- a second liner disposed around each fin in a low threshold voltage region of the structure, with a dopant layer implanted into each fin;
- wherein the first liner and the second liner comprise different materials.
2 more elements
Dependencies are inferred from the claim text.