Semiconductor device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsJunpei MOMO, Kazutaka KURIKI, Hiromichi GODO
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Abstract
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.
Claims6
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- and
- an electric double-layer capacitor,
- wherein the first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate,
- wherein the first transistor includes a first semiconductor in a channel region,
- wherein the second transistor includes a second semiconductor in a channel region,
- wherein a band gap of the second semiconductor is wider than a band gap of the first semiconductor, and
- wherein the electric double-layer capacitor includes an ionic liquid.
Dependencies are inferred from the claim text.