Electrostatic discharge devices and methods of manufacture
AssigneeInternational Business Machines Corporation
InventorsHuiming BU, Junjun LI, Theodorus E. STANDAERT, Tenko YAMASHITA
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Abstract
Electrostatic discharge (ESD) devices and methods of manufacture are provided. The method includes forming a plurality of fin structures and a mesa structure from semiconductor material. The method further includes forming an epitaxial material with doped regions on the mesa structure and forming gate material over at least the plurality of fin structures. The method further includes planarizing at least the gate material such that the gate material and the epitaxial material are of a same height. The method further includes forming contacts in electrical connection with respective ones of the doped regions of the epitaxial material.
Claims14
A semiconductor structure, comprising:
- an ESD device on a substrate;
- and
- a gate stack over a plurality of fins on the substrate, wherein an upper surface of the gate stack is co-planar with an upper surface of the ESD device.
A method of forming a semiconductor structure, comprising:
- forming an ESD device on a substrate;
- forming a gate stack over a plurality of fins on the substrate;
- and
- planarizing the ESD device and the gate stack such that an upper surface of the gate stack is co-planar with an upper surface of the ESD device.
Dependencies are inferred from the claim text.