High surge transient voltage suppressor

A transient voltage suppressing (TVS) device, comprising:

• a semiconductor substrate of a first conductivity type, the substrate being heavily doped;
• a first epitaxial layer of the first conductivity type formed on the substrate, the first epitaxial layer having a first thickness;
• a second epitaxial layer of a second conductivity type, opposite the first conductivity type, formed on the first epitaxial layer;
• a first buried layer of the first conductivity type and a second buried layer of the second conductivity type formed in the first epitaxial layer extending to the second epitaxial layer, the second buried layer being formed in a central portion of the TVS device;
• a first body region of the second conductivity type formed at a first surface of the second epitaxial layer in the central portion of the TVS device;
• a first heavily doped region of the first conductivity type formed in the first body region at the first surface of the second epitaxial layer;
• a third buried layer region of the second conductivity type formed in the first epitaxial layer extending from the second buried layer to the semiconductor substrate, the third buried layer region being positioned in the central portion of the TVS device under the first heavily doped region;
• and
• a second body region of the second conductivity type formed at a junction of the first heavily doped region and the first body region, the second body region being more heavily doped than the first body region,
• wherein the semiconductor substrate is connected to a first electrode, the first heavily doped region is connected to a second electrode of the TVS device.