Semiconductor device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsYoichiro KURITA, Hideto FURUYAMA, Hiroshi UEMURA
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsYoichiro KURITA, Hideto FURUYAMA, Hiroshi UEMURA
Estimating the term…
According to one embodiment, a semiconductor device includes an interconnect layer, an electrical element, an optical element, and a resin portion. The resin portion includes a first partial region between the electrical element and the optical element. At least a portion of the optical element does not overlap the resin portion in a first direction. The first partial region has first and second resin portion surfaces. The second resin portion surface is opposite to the first resin portion surface and opposes the interconnect layer. The optical element has first and second optical element surfaces. The second optical element surface is opposite to the first optical element surface and opposes the interconnect layer. A distance along the first direction between the interconnect layer and the first resin portion surface is longer than a distance along the first direction between the interconnect layer and the first optical element surface.
A semiconductor device, comprising:
A method for manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.