Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorMin Gi Hong
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate and a first semiconductor chip that is on the substrate. The first semiconductor chip includes a first surface facing the substrate, a second surface opposite the first surface and having a first circuit region therein, and a first TSV extending between the first surface and the second surface. An upper semiconductor chip is on the second surface of the first semiconductor chip, is electrically connected with the first semiconductor chip, includes an upper circuit region in a surface thereof facing the second surface of the first semiconductor chip, and does not have a TSV extending through an inside thereof. A thickness of the upper semiconductor chip is greater than a thickness of the first semiconductor chip.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first semiconductor chip that is on the substrate, wherein the first semiconductor chip comprises a first surface facing the substrate, a second surface opposite the first surface and having a first circuit region therein, and a first conductive via extending between the first surface and the second surface;
- and
- an upper semiconductor chip that is on the second surface of the first semiconductor chip and is electrically connected with the first semiconductor chip, wherein the upper semiconductor chip comprises an upper circuit region in a surface thereof facing the second surface of the first semiconductor chip, and wherein the upper semiconductor chip is free of a conductive via extending therethrough,
- wherein a thickness of the upper semiconductor chip is greater than a first thickness of the first semiconductor chip.
A semiconductor device, comprising:
- a buffer semiconductor chip comprising a buffer circuit region in an upper surface thereof;
- a first semiconductor chip that is on the upper surface of the buffer semiconductor chip, and comprises a first surface facing the upper surface of the buffer semiconductor chip, and a second surface opposite the first surface and comprising a first circuit region therein;
- a second semiconductor chip that is on the second surface of the first semiconductor chip, and comprises a third surface facing the second surface of the first semiconductor chip, and a fourth surface opposite the third surface and comprising a second circuit region therein;
- a third semiconductor chip that is on the fourth surface of the second semiconductor chip, and comprises a fifth surface facing the fourth surface of the second semiconductor chip, and a sixth surface opposite the fifth surface and comprising a third circuit region therein;
- and
- an upper semiconductor chip that is on the sixth surface of the third semiconductor chip, and comprises an upper circuit region in a surface thereof facing the sixth surface of the third semiconductor chip, and is free of a conductive via penetrating therethrough,
- wherein a thickness of the upper semiconductor chip is greater than a thickness of the first semiconductor chip.
A semiconductor device, comprising:
- a substrate;
- a plurality of semiconductor chips that are sequentially stacked on the substrate, wherein the plurality of semiconductor chips comprise circuit regions in respective upper surfaces thereof, and have conductive vias penetrating through respective thicknesses thereof;
- and
- an upper semiconductor chip that is on the upper surfaces of the plurality of semiconductor chips, wherein the upper semiconductor chip comprises an upper circuit region facing the upper surfaces of the plurality of semiconductor chips, and is free of a conductive via penetrating therethrough,
- wherein a thickness of the upper semiconductor chip is greater than a respective thickness of any one of the plurality of semiconductor chips by two times or more,
- wherein the plurality of semiconductor chips comprise 2n-1 semiconductor chips, where n is an integer greater than or equal to 1.
Dependencies are inferred from the claim text.