Three-step Etching to Form RDL
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Jung Tsai, Yun Chen Hsieh, Jyun-Siang Peng, Tai-Min Chang, Yi-Yang Lei, Hung-Jui Kuo, Chen-Hua Yu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Jung Tsai, Yun Chen Hsieh, Jyun-Siang Peng, Tai-Min Chang, Yi-Yang Lei, Hung-Jui Kuo, Chen-Hua Yu
Estimating the term…
A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.
A method comprising:
A method comprising:
A structure comprising:
Dependencies are inferred from the claim text.