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US 2019/0157235 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYosuke NAKATA, Taishi SASAKI
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Abstract
A semiconductor chip (3) is bonded to an upper surface of an electrode substrate (1) via a first solder (2). A lead frame (5) is bonded to an upper surface of the semiconductor chip (3) via a second solder (4). An intermediate plate (6) is provided in the first solder (2) between the electrode substrate (1) and the semiconductor chip (3). A yield strength of the intermediate plate (6) is higher than yield strengths of the electrode substrate (1) and the first solder (2) within the whole operating temperature range of the semiconductor device.
Claims19
A semiconductor device comprising:
- an electrode substrate;
- a semiconductor chip bonded to an upper surface of the electrode substrate via a first solder;
- a lead frame bonded to an upper surface of the semiconductor chip via a second solder;
- and
- an intermediate plate provided in the first solder between the electrode substrate and the semiconductor chip,
- wherein a yield strength of the intermediate plate is higher than yield strengths of the electrode substrate and the first solder within the whole operating temperature range of the semiconductor device.
3 more elements
Dependencies are inferred from the claim text.