Rounded metal trace corner for stress reduction

An integrated circuit package, comprising:

• a first integrated circuit die;
• a second integrated circuit die;
• a substrate, wherein both the first integrated circuit die and the second integrated circuit die are connected to the substrate;
• and
• an interconnect bridge embedded within the substrate, wherein the interconnect bridge includes at least one metal trace component, wherein the metal trace component includes rounded corners on a bottom portion of the metal trace component.

An interconnect bridge, comprising:

• one or more communication vias enabled to connect the interconnect bridge to external electrical devices;
• one or more power delivery components connected to a source of power;
• and
• a metal trace communication component, wherein the bottom of the metal trace communication component has curved corners, and wherein the interconnect bridge is embedded in an organic substrate.

A method comprising

• creating a first silicon layer of an interconnect bridge;
• applying a resist mask to the first silicon layer;
• removing at least some of the silicon layer not covered by the resist mask through plasma etching to create a groove in the first silicon layer, wherein a pressure level and a gas composition associated with the plasma etching have been controlled to result in a groove with a rounded bottom;
• filling the groove with a conductive metal;
• and
• embedding the interconnect bridge in a substrate.