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US 2019/0157213 A1Published application
Semiconductor structure with substantially straight contact profile
AssigneeGlobalfoundries Inc.
InventorsRonald NAUMANN, Matthias ZINKE, Robert SEIDEL, Tobais BARCHEWITZ
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.
Claims20
A structure, comprising:
- a block material comprising an upper oxidized layer at an interface with an insulating material, the insulating material and the oxidized layer having substantially a same etching rate regardless of a thickness of the oxidized layer;
- and
- an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material, the interconnect contact structure extending through the insulating material and contacting an underlying wiring structure,
- wherein the substantially straight profile is substantially 90 degrees as measured relative to a horizontal surface of the underlying wiring structure.
1 more element
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A structure comprising:
- a wiring layer formed in an insulator material;
- a low-k dielectric block material comprising an upper surface composed of oxidized material;
- an interlevel dielectric material directly on the upper surface, the interlevel dielectric material and the oxidized material of the low-k dielectric block material having substantially a same etching rate regardless of a thickness of the oxidized material;
- and
- a contact extending to the wiring layer, through the block material, oxidized material and the interlevel dielectric material, the contact having a substantially straight profile within the oxidized material, the contact structure extending through the interlevel dielectric material and contacting the wiring layer,
- wherein the substantially straight profile is substantially 90 degrees as measured relative to a horizontal surface of the wiring layer.
3 more elements
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Dependencies are inferred from the claim text.