Package substrates with integral devices
AssigneeIntel Corporation
InventorsRobert Alan May, Kristof Kuwawi Darmawikarta, Sri Ranga Sai Boyapati
Life of this patent
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Abstract
Disclosed herein are package substrates with integrated components, as well as related apparatuses and methods. For example, in some embodiments, an integrated circuit (IC) package, may include: a substrate having opposing first and second faces, an insulating material disposed between the first and second faces, and a thin film transistor (TFT) disposed between the first and second faces, wherein a conductive portion of the TFT is disposed on a layer of the insulating material, and the conductive portion of the TFT is a gate, source, or drain of the TFT; and a die coupled to the first face of the substrate.
Claims25
An integrated circuit (IC) package, comprising:
- a substrate having opposing first and second faces, an insulating material disposed between the first and second faces, and a thin film transistor (TFT) disposed between the first and second faces, wherein a conductive portion of the TFT is disposed on a layer of the insulating material, and the conductive portion of the TFT is a gate, source, or drain of the TFT;
- and
- a die coupled to the first face of the substrate.
A computing device, comprising:
- a circuit board;
- and
- an integrated circuit (IC) package disposed on the circuit board, wherein the IC package includes:
- a substrate having opposing first and second faces, an insulating material disposed between the first and second faces, and a thin film transistor (TFT) disposed between the first and second faces, wherein a conductive portion of the TFT is disposed on a layer of the insulating material, and the conductive portion of the TFT is a gate, source, or drain of the TFT;
- and
- a die coupled to the first face of the substrate.
A method of manufacturing a substrate for an integrated circuit (IC) package, comprising:
- providing a first patterned layer of conductive material on an insulating material;
- providing a transistor stack on the first patterned layer, wherein the transistor stack includes a semiconductor material, a high-k dielectric material, and a second patterned layer of conductive material;
- providing additional insulating material on the transistor stack;
- and
- providing conductive contacts to the first and second patterned layers of conductive material, wherein the conductive contacts extend through the insulating material.
A method of operating an integrated circuit (IC) package, comprising:
- providing power to a die in the IC package, wherein the die is disposed on a substrate in the IC package, and the substrate includes opposing first and second faces, an insulating material disposed between the first and second faces, and a thin film transistor (TFT) disposed between the first and second faces, wherein a conductive portion of the TFT is disposed on a layer of the insulating material, and the conductive portion of the TFT is a gate, source, or drain of the TFT;
- and
- causing electrical signaling between the TFT and the die.
Dependencies are inferred from the claim text.