Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements

A method of forming a contact to a semiconductor device comprising:

• forming a nickel and platinum semiconductor alloy at a base of a via opening on a contact surface of the semiconductor device;
• forming a titanium layer deposited in the via opening in contact with the nickel platinum semiconductor alloy;
• depositing an aluminum containing layer atop the titanium layer;
• and
• applying an anneal to a material stack including the aluminum containing layer, the titanium layer and the nickel and platinum semiconductor alloy, wherein said applying the anneal provides a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device, wherein the contact alloy comprises aluminum in an amount greater than 40 at. %.

A method of forming an alloy comprising:

• forming a nickel and platinum semiconductor alloy;
• forming a titanium layer in contact with the nickel platinum semiconductor alloy;
• forming an aluminum containing layer in contact with the titanium layer;
• and
• applying an anneal to a material stack including the aluminum containing layer, the titanium layer and the nickel and platinum semiconductor alloy, wherein said applying the anneal provides an alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element that comprises aluminum in an amount greater than 40 at. %.