Structural enhancement of cu nanowires
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Chih-Chao Yang
Life of this patent
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Abstract
A structure comprising a first dielectric layer embedded with a first interconnect structure. An insulator layer is disposed on the first dielectric layer. A second dielectric layer is disposed on the insulator layer. A via resides within the second dielectric layer. A second interconnect structure is isolated from the first dielectric layer. A first portion of a bottom surface of the via resides on a top surface of the insulator layer. A second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.
Claims14
A structure, comprising:
- a first dielectric layer embedded with a first interconnect structure;
- an insulator layer disposed on the first dielectric layer;
- a second dielectric layer disposed on the insulator layer;
- a vertical electrical connection (via) residing within the second dielectric layer;
- and
- a second interconnect structure isolated from the first dielectric layer;
- wherein a first portion of a bottom surface of the via resides on a top surface of the insulator layer, and a second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.
A structure, comprising:
- a first dielectric layer embedded with a first interconnect structure that is coupled with a diffusion barrier layer;
- an insulator layer disposed on the first dielectric layer;
- a second dielectric layer disposed on the insulator layer;
- a vertical electrical connection (via) residing within the second dielectric layer;
- and
- a second interconnect structure isolated from the first dielectric layer, the second interconnect structure disposed within the via and coupled with the first interconnect structure;
- wherein a first portion of a bottom surface of the via resides on a top surface of the insulator layer, and a second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.
Dependencies are inferred from the claim text.