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US 2019/0157198 A1Published application
Semiconductor device, layout design method for the same and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJOON-NYUNG LEE, JEONG-HOON AHN
Life of this patent
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Abstract
A semiconductor device includes a first electrode which includes a first main portion, and a first extension that extends from the first main portion, and a dielectric layer which surrounds a sidewall and a bottom surface of the first main portion, wherein the first main portion includes a first portion having a first depth, and a second portion having a second depth deeper than the first depth.
Claims23
A semiconductor device comprising:
- a first electrode including a first main portion, and a first extension that extends from the first main portion;
- and
- a dielectric layer which surrounds a sidewall and a bottom surface of the first main portion,
- wherein the first main portion includes a first portion having a first depth, and a second portion having a second depth deeper than the first depth.
1 more element
(canceled)
(canceled)
A semiconductor device comprising:
- a first electrode including a first main portion extending in a first direction, and a first extension extending from the first main portion in a second direction intersecting with the first direction;
- a second electrode including a second extension extending in the second direction;
- and
- a dielectric layer surrounding a sidewall and a bottom surface of the first main portion,
- wherein the first main portion includes a first portion having a first depth, and
- the second extension has a second depth shallower than the first depth.
3 more elements
A semiconductor device comprising:
- a first electrode including a first main portion extending in a first direction, and a plurality of first extensions extending from the first main portion in a second direction intersecting with the first direction;
- a second electrode including a plurality of second extensions extending in the second direction;
- and
- a dielectric layer disposed between each of the first extensions and each of the second extensions,
- wherein each of the first extensions and each of the second extensions are arranged alternately along the first direction,
- the first main portion includes a plurality of first portions having a first depth, and a plurality of second portions having a second depth deeper than the first depth, and
- each of the second portions of the first main portion overlaps each of the second extensions in the second direction.
4 more elements
23-32. (canceled)
Dependencies are inferred from the claim text.