Elbow contact for field-effect transistor and manufacture thereof
AssigneeInternational Business Machines Corporation
InventorsGuy Cohen, Christian Lavoie, Ahmet Serkan Ozcan, Paul Solomon
Life of this patent
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Abstract
A field-effect transistor (FET) and method of manufacture thereof include a gate, a pillar of grown on a top of the planar source and drain regions, and a conductive sheath flanking the pillar, the sheath is bent up, alongside, and over the gate.
Claims20
A field-effect transistor (FET) including near planar source and drain regions, the FET comprising:
- a gate;
- a doped semiconductor structure formed on top of the planar source and drain regions;
- and
- a sheath of conducting materials flanking the formed doped semiconductor structure,
- wherein the sheath is perpendicular to a surface of the planar source and drain regions.
A method of manufacture of a contact for a field-effect transistor (FET) including a gate, planar source and drain regions, and a semiconductor structure formed on a top of the planar source and drain region, the method comprising:
- etching a trench down to the planar source or drain layer;
- and
- forming a sheath bent up and become vertical or perpendicular to the surface of the semiconductor wafer.
A method of manufacture of a contact for a field-effect transistor (FET), the method comprising:
- patterning a mask above source and drain of a FET to form holes in said mask;
- growing epitaxial structures from holes in said mask;
- and
- growing a doped epitaxial shell to coat the sidewalls of the structures.
Dependencies are inferred from the claim text.