Semiconductor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYU-CHANG LIN, SHIH-HSIANG CHIU, TIEN-SHUN CHANG, CHUN-FENG NIEH, HUICHENG CHANG
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Abstract
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes following operations. A plurality of fin structures and a plurality of trenches are formed over a semiconductor substrate, wherein the fin structures are spaced apart by the trenches, and the fin structures are covered by a mask layer. A dielectric layer is formed over the substrate, wherein the dielectric layer is in the plurality of trenches. The dielectric layer is annealed. A plurality of dopants in the dielectric layer are formed when the fin structures are covered by the mask layer.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a plurality of fin structures and a plurality of trenches over a semiconductor substrate, wherein the fin structures are spaced apart by the trenches, and the fin structures are covered by a mask layer;
- forming a dielectric layer over the substrate, wherein the dielectric layer is in the plurality of trenches;
- annealing the dielectric layer;
- removing the dielectric layer outside the plurality of trenches;
- and
- forming a plurality of dopants in the dielectric layer when the fin structures are covered by the mask layer, after the removing the dielectric layer outside the plurality of trenches.
A method for manufacturing a semiconductor structure, comprising:
- providing a semiconductor substrate comprising a fin structure and a plurality of trenches at opposing sides of the fin structure;
- forming a dielectric layer in the plurality of trenches;
- removing the dielectric layer outside the plurality of trenches;
- and
- expanding a volume of the dielectric layer to compress the fin structure, after the removing the dielectric layer outside the plurality of trenches.
A semiconductor structure, comprising:
- a semiconductor substrate;
- a fin structure disposed over the semiconductor substrate;
- an isolation structure disposed over the semiconductor substrate at opposing sides of the fin structure;
- and
- a plurality of dopants in the isolation structure, wherein a doping concentration of the dopants is gradually decreased from a top surface to a bottom surface of the isolation structure.
Dependencies are inferred from the claim text.