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US 2019/0157159 A1Published application
Etch Stop Layer Between Substrate and Isolation Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Abstract
A device that includes a substrate; semiconductor fins extending from the substrate; an isolation structure over the substrate and laterally between the semiconductor fins; a liner layer between sidewalls of the semiconductor fins and the isolation structure; and an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins. The etch stop layer includes a material different than that of the isolation structure and the liner layer.
Claims20
A device, comprising:
- a substrate;
- semiconductor fins extending from the substrate;
- an isolation structure over the substrate and laterally between the semiconductor fins;
- a liner layer between sidewalls of the semiconductor fins and the isolation structure;
- and
- an etch stop layer between the substrate and the isolation structure and laterally between the semiconductor fins, the etch stop layer including a material different than that of the isolation structure and the liner layer.
3 more elements
A method, comprising:
- providing a structure having a semiconductor substrate and semiconductor fins protruding from the semiconductor substrate;
- forming a dielectric liner layer on at least sidewalls of the semiconductor fins;
- forming an etch stop layer in contact with the semiconductor substrate, and between adjacent semiconductor fins;
- and
- forming an isolation structure over the etch stop layer and the dielectric liner layer, and between adjacent semiconductor fins.
2 more elements
A method, comprising:
- providing a substrate;
- forming a patterned mask over the substrate;
- etching the substrate through the patterned mask, thereby forming fins protruding out of the substrate;
- forming a liner layer over the substrate and sidewalls of the fins, the liner layer including silicon nitride;
- anisotropically etching the liner layer to expose the substrate, leaving remaining portions of the liner layer over the sidewalls of the fins;
- after the anisotropically etching of the liner layer, forming a layer of silicon compound over the substrate and between the fins;
- and
- forming an isolation structure over the layer of silicon compound and between the fins.
5 more elements
Dependencies are inferred from the claim text.