Methods, apparatus and system for forming a finfet device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage

A method, comprising:

• forming a first fin in an input/output (I/O) device portion of a semiconductor substrate;
• forming a second fin in a core device portion of said semiconductor substrate;
• depositing a first oxide layer on said first and second fins;
• forming a hybrid oxide layer by depositing a second oxide layer on said first and second fins, wherein the thickness of said second oxide layer is based on a first operating voltage for said I/O device portion, and wherein said second oxide layer merges with said first oxide layer to form said hybrid oxide layer;
• removing said hybrid layer from said core device portion;
• forming an interfacial layer over said core device portion after removing said hybrid layer from said core device portion;
• depositing a hi-k material over said core device portion and said I/O device portion;
• and
• performing a replacement metal gate (RMG) process comprising depositing work function metal (WFM) layer in a gate cavity and depositing a gate metal selected from the group consisting of tungsten, cobalt, and copper, over said WFM layer;
• wherein said I/O device portion is capable of operating at said first voltage and said core device portion is capable of operating at a second voltage that is lower than said first voltage.

A system, comprising:

• a semiconductor device processing system capable of manufacturing a fin field effect transistor (finFET) device;
• and
• a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of said semiconductor device processing system;
• wherein said semiconductor device processing system is adapted to:
• form a first set of fins on a first portion of a semiconductor substrate;
• form a second set of fins on a second portion of said semiconductor substrate;
• deposit a first oxide layer on said first and second set of fins;
• deposit a second oxide layer on said first and second set of fins, wherein the thickness of said second oxide layer is based on a first operating voltage for said first portion, and wherein said second oxide layer merges with said first oxide layer;
• remove said first and second oxide layers from said second portion;
• form an interfacial layer over said second portion;
• deposit a hi-k material over said first portion and said second portion;
• and
• perform a replacement metal gate process comprising depositing work function metal (WFM) layer in a gate cavity and depositing a gate metal selected from the group consisting of tungsten, cobalt, and copper, over said WFM layer;
• wherein said first portion is capable of operating at said first voltage and said second portion is capable of operating at a second voltage that is lower than said first voltage.