US 2019/0157153 A1 · NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WORKFUNCTION ON COMMON SUBSTRATE

Abstract

Non-planar I/O and logic semiconductor devices having different workfunctions on common substrates and methods of fabricating non-planar I/O and logic semiconductor devices having different workfunctions on common substrates are described. For example, a semiconductor structure includes a first semiconductor device disposed above a substrate. The first semiconductor device has a conductivity type and includes a gate electrode having a first workfunction. The semiconductor structure also includes a second semiconductor device disposed above the substrate. The second semiconductor device has the conductivity type and includes a gate electrode having a second, different, workfunction.

Claims20

Dependent claims

An integrated circuit structure, comprising:

a first N-type fin-FET device having a first fin, the first N-type fin-FET device comprising a first gate electrode having a first layer having a composition, the first layer having a first thickness;
and
a second N-type fin-FET device having a second fin, the second N-type fin-FET device comprising a second gate electrode having a second layer having the composition, the second layer having a second thickness greater than the first thickness, wherein the second gate electrode of the second N-type fin-FET device has a gate length greater than a gate length of the first gate electrode of the first N-type fin-FET device.

Dependencies are inferred from the claim text.

Facts

Application

16/253,760Filed 22 Jan 2019

Priority

24 Feb 2016

Published

23 May 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 84/014
Manufacturing their gate conductors: the gate conductors having different materials or different implants
H10D 30/6215
Fin field-effect transistors [FinFET]: having multiple independently-addressable gate electrodes
H10D 64/01318
Characterised by the conductor: the conductor comprising a layer of alloy material, compound material or organic material contacting the…
H10D 64/667
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes: the conductor comprising a layer of…

Non-planar i/o and logic semiconductor devices having different workfunction on common substrate

Life of this patent

Non-planar i/o and logic semiconductor devices having different workfunction on common substrate

Life of this patent

Abstract

Claims20