Method of selective film deposition for forming fully self-aligned vias

A substrate processing method, comprising:

• a) arranging substrates on a plurality of substrate supports in a process chamber, wherein the process chamber contains processing spaces defined around an axis of rotation in the process chamber, each of the substrates containing a first surface and a second surface;
• b) rotating the plurality of substrate supports about the axis of rotation;
• c) exposing the substrates to a reactant gas containing a metal-containing catalyst;
• d) exposing the substrates to a cleaning gas that removes an oxidized layer from the second surface along with the metal-containing catalyst on the oxidized layer;
• e) exposing the substrates to a deposition gas containing a silanol gas for a time period that selectively deposits an initial SiO2 film on the metal-containing catalyst on the first surface, wherein the initial SiO2 film forms a raised feature adjacent the second surface;
• f) exposing the substrates to the reactant gas to selectively coat the raised feature of the initial SiO2 film, but not the second surface, with the metal-containing catalyst;
• and
• g) exposing the substrates to the deposition gas containing the silanol gas for a time period that selectively deposits an additional SiO2 film on the metal-containing catalyst on the raised feature of the initial SiO2 film.