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US 2019/0157145 A1Published application
Process integration approach of selective tungsten via fill
AssigneeApplied Materials, Inc.
InventorsHe REN, Feiyue MA, Yu LEI, Kai WU, Mehul B. NAIK, Zhiyuan WU, Vikash BANTHIA, Hua AI
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Abstract
Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.
Claims20
An interconnect comprising:
- a stack formed on a substrate having a via and a trench formed therein, wherein the stack comprises:
- a first dielectric layer and a conductive layer disposed on the substrate,
- a dielectric barrier layer disposed on top of the first dielectric layer and disposed on top of a portion of the conductive layer, and
- a second dielectric layer disposed on top of the dielectric barrier layer, wherein an upper surface of the conductive layer defines a bottom of the via and sidewalls of the dielectric barrier layer and the second dielectric layer define sides of the via;
- a first metal formed from a first material of a first type deposited in the via;
- and
- a second metal formed from a second material of a second type deposited in the trench on top of the first metal.
4 more elements
An interconnect comprising:
- a stack formed on a substrate having a via and a trench formed therein, wherein the stack comprises:
- a first dielectric layer and a conductive layer disposed on the substrate,
- a dielectric barrier layer disposed on top of the first dielectric layer and disposed on top of a portion of the conductive layer, and
- a second dielectric layer disposed on top of the dielectric barrier layer, wherein an upper surface of the conductive layer defines a bottom of the via and sidewalls of the dielectric barrier layer and the second dielectric layer define sides of the via;
- a first metal formed from a first material of a first type deposited in the via on top of the upper surface of the conductive layer;
- and
- a second metal formed from a second material of a second type deposited in the trench on top of the first metal.
4 more elements
An interconnect comprising:
- a stack formed on a substrate having a via and a trench formed therein;
- a first metal formed from a first material of a first type deposited in the via;
- and
- a second metal formed from a second material of a second type deposited in the trench.
1 more element
Dependencies are inferred from the claim text.