Method for manufacturing semiconductor structure

A method for manufacturing a semiconductor structure, the method comprising:

• providing a semiconductor substrate having a doped semiconductor region;
• forming a dielectric layer over a semiconductor substrate;
• forming a trench exposing the doped semiconductor region in the dielectric layer, wherein the trench includes a sidewall;
• forming a silicide layer in the trench, wherein the silicide layer is over the doped semiconductor region and the sidewall surface of the trench;
• forming a capping layer over the silicide layer;
• forming a sacrificial layer over the capping layer;
• and
• removing the sacrificial layer along with a portion of the silicide layer and a portion of the capping layer from the sidewall of the trench.

A method for manufacturing a semiconductor structure, the method comprising:

• providing a semiconductor substrate;
• forming a dielectric layer having a trench over the semiconductor substrate, wherein the trench includes a bottom and a sidewall;
• forming a conductive layer in the trench, wherein the conductive layer comprises a first conductive portion over the bottom of the trench, and a second conductive portion over the sidewall of the trench;
• forming a sacrificial layer over the conductive layer by a physical vapor deposition (PVD) operation;
• and
• removing the sacrificial layer along with the second conductive portion from the sidewall of the trench.