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US 2019/0157140 A1Published application
Multi-level air gap formation in dual-damascene structure
AssigneeInternational Business Machines Corporation
InventorsRichard A. Conti, Jessica Dechene, Susan S. Fan, Son V. Nguyen, Jeffrey C. Shearer
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Abstract
An upper layer is formed in a first interlayer dielectric (ILD) layer. The upper layer comprises a plurality of metal interconnects and one or more upper layer air gaps positioned between adjacent metal interconnects. A lower layer is formed in the first ILD layer. The lower layer comprises one or more vias, and one or more lower air gaps positioned between adjacent vias. The upper layer and the lower layer are formed in accordance with a dual-damascene process.
Claims20
A method for forming a semiconductor structure comprising steps of:
- forming an upper layer in a first interlayer dielectric (ILD) layer, wherein forming the upper layer in the first ILD layer comprises:
- forming a plurality of metal interconnects;
- and
- forming one or more upper layer air gaps positioned between adjacent metal interconnects;
- and
- forming a lower layer in the first ILD layer, wherein forming the lower layer in the first ILD layer comprises forming one or more lower layer air gaps positioned between adjacent vias formed within the lower layer.
3 more elements
Dependencies are inferred from the claim text.