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US 2019/0157139 A1Published application
Interconnect structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJye-Yen CHENG, Chen-Yu SHYU, Ming-Shuoh LIANG
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Abstract
An interconnect structure includes a damascene structure, an inter-metal dielectric (IMD), a dielectric block and a metal via. The inter-metal dielectric layer is over the damascene structure. The dielectric block is embedded in the IMD layer and has a different etch selectivity than the IMD layer. The metal via is in the IMD layer and through the dielectric block to electrically connect the damascene structure.
Claims20
An interconnect structure, comprising:
- a first inter-metal dielectric (IMD) layer;
- a damascene structure embedded in the first IMD layer;
- a second IMD layer over the damascene structure and in contact with the first IMD layer;
- a dielectric block embedded in the second IMD layer and having a different etch selectivity than the second IMD layer;
- and
- a metal via in the second IMD layer, through the dielectric block, and electrically coupled to the damascene structure.
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An interconnect structure, comprising:
- a first inter-metal dielectric (IMD) layer;
- a metallization layer in the first IMD layer;
- a first dielectric block over the metallization layer;
- a second IMD layer surrounding the first dielectric block and in contact with a top surface of the first dielectric block;
- and
- a first metal via in the second IMD layer, the first metal via penetrating through the first dielectric block and electrically connected to the metallization layer.
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A method, comprising:
- forming a dielectric block over a portion of a damascene structure, while remaining another portion of the damascene structure free from coverage by the dielectric block;
- forming an inter-metal dielectric (IMD) layer over the dielectric block;
- after forming the dielectric block, etching a via opening in the IMD layer and over the dielectric block, wherein the dielectric block has higher etch resistance to the etching the via opening than the IMD layer;
- etching an opening in the dielectric block and under the via opening;
- and forming a metal via in the via opening and the opening.
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Dependencies are inferred from the claim text.