Structure for radiofrequency applications
AssigneeSoitec
InventorsEric Desbonnets, Ionut Radu, Oleg Kononchuk, Jean-Pierre Raskin
Life of this patent
Estimating the term…
Abstract
A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms·cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms·cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.
Claims20
1-19. (canceled)
A substrate for microelectronic radiofrequency devices comprising:
- a support substrate comprising a first semiconductor material having a resistivity greater than 500 ohms·cm;
- a plurality of trenches in the support substrate filled with a second material and defining a plurality of first zones on a first side of the first semiconductor material and at least one second zone of a second material, the second material having a resistivity greater than 10 kohms·cm, the plurality of first zones having a maximum dimension of less than 10 microns, the plurality of first zones being isolated from one another by the at least one second zone.
A method for manufacturing a substrate for microelectronic radiofrequency devices, comprising:
- providing a support substrate comprising a first semiconductor material having a resistivity greater than 500 ohms·cm, the support substrate having a first side;
- etching, according to a mask, a plurality of trenches extending from the first side of the support substrate to a determined depth within the support substrate;
- and
- filling the plurality of trenches with a second material to form first areas of a first material and at least one second zone on the first side of the second material, the first zones having a maximum dimension of 10 microns or less, the first zones being insulated from one another by the second zone, the second material having a resistivity greater than 10 kohms·cm.
A method for manufacturing a substrate for microelectronic radiofrequency devices, comprising:
- providing a support substrate comprising a first semiconductor material having a resistivity greater than 500 ohms·cm;
- depositing, according to a mask, a plurality of pillars made from the first material and of a determined height, on the support substrate, an upper surface of the pillars defining a first side of the substrate, the pillars being insulated from each other by a plurality of trenches extending from the first side of the support substrate to a depth within the support substrate defined by the determined height of the pillars;
- and
- filling the plurality of trenches with a second material to form first areas of the first material and at least one second zone on the first side of the second material, the first areas having a maximum dimension of 10 microns or less, the first areas being insulated from one another by the at least one second zone, the second material having a resistivity greater than 10 kohms·cm.
Dependencies are inferred from the claim text.