Back to results
US 2019/0157134 A1Published application
Methods For Gapfill In High Aspect Ratio Structures
AssigneeApplied Materials, Inc.
InventorsPramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
Life of this patent
Estimating the term…
Abstract
Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).
Claims15
A processing method comprising:
- positioning a substrate surface in a processing chamber, the substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a first sidewall and a second sidewall defining a width, the substrate surface including a film on the features, the film having a seam between the first sidewall and the second sidewall of the at least one feature;
- and
- implanting ions into the film to break bonds in the film and allow the film to reflow and close the seams.
A processing method comprising:
- providing a substrate surface having at least one feature, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a first sidewall and a second sidewall defining a width;
- filling the at least one feature with an amorphous silicon film by a gapfill process to form a film with a seam between the first sidewall and the second sidewall;
- and
- implanting argon ions to a depth of the film to break bonds in the film and allow the film to reflow and close the seam,
- wherein argon ions are implanted at a temperature sufficient to allow the film to remain substantially amorphous and the depth is in a range of about 10 nm to about 150 nm.
2 more elements
Dependencies are inferred from the claim text.