Wafer cutting device and method

A wafer cutting method using a wafer cutting device comprising an etching unit, a gas supply unit, and a chemical reaction liquid supply unit, the wafer cutting method comprising:

• a loading step of fixing a wafer to be cut on a carrier disk;
• an adjusting step of adjusting a distance between a fluid guide shroud and a carrier disk;
• a gas supply step of supplying a protective gas to an inner layer of the fluid guide shroud by the gas supply unit to maintain an internal pressure of the fluid guide shroud being greater than an external pressure, and supplying a protective gas to the carrier disk through a gas passage and gas apertures so as to make the protective gas flow from the gas apertures to an edge of the wafer to be cut;
• an etching step of supplying a chemical reaction liquid to the interlayer of the fluid guide shroud by the chemical reaction liquid supply unit so as to make the chemical reaction liquid flow to a portion of the wafer to be cut which is outside a portion thereof below the fluid guide shroud, and wet-etch the wafer to be cut to obtain a target wafer;
• a cleaning step of substituting the chemical reaction liquid in the chemical reaction liquid supply unit with ultrapure water and supplying it to the interlayer of the fluid guide shroud so as to remove the chemical reaction liquid remaining on a surface of the target wafer;
• a drying step of increasing a pressure and a flow rate of the protective gas supplied to the inner layer of the fluid guide shroud so as to dry the target wafer;
• and
• a picking step of raising the fluid guide shroud to pick the target wafer from the carrier disk.