Method of forming a coated article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide
AssigneeApplied Materials, Inc.
InventorsJennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
Claims21
1-20. (canceled)
A method of forming a coated article that is resistant to erosion by halogen-containing plasmas, the method comprising:
- forming a ceramic coating on an article, the ceramic coating comprising yttrium oxide at a concentration from 35 mole % to less than 62.1 mole % and zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.
A method of forming a coated article that is resistant to erosion by halogen-containing plasmas, the method comprising:
- forming a ceramic coating on an article, the ceramic coating comprising yttrium oxide at a concentration from 65.9 mole % to 80 mole % and zirconium oxide at a concentration from 34.1 mole % to 20 mole %.
A method of forming a coated article that is resistant to erosion by halogen-containing plasmas, the method comprising:
- forming a ceramic coating on an article, the ceramic coating consisting essentially of a solid solution of yttrium oxide at a concentration from 35 mole % to less than 62.1 mole % and zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %, wherein the article is a semiconductor processing chamber component selected from a group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner.
Dependencies are inferred from the claim text.