Method of forming a bulk article and semiconductor chamber apparatus from yttrium oxide and zirconium oxide

A method of forming a bulk ceramic article that is resistant to erosion by halogen-containing plasmas, the method comprising:

• sintering a green body formed from a first granular powder comprising yttrium oxide and a second granular powder comprising zirconium oxide to form the bulk ceramic article, wherein the bulk ceramic article comprises the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole % and the zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %.

A method of forming a bulk ceramic article that is resistant to erosion by halogen-containing plasmas, the method comprising:

• sintering a green body formed from a first granular powder comprising yttrium oxide and a second granular powder comprising zirconium oxide to form the bulk ceramic article, wherein the bulk ceramic article comprises the yttrium oxide at a concentration from 65.9 mole % to 80 mole % and the zirconium oxide at a concentration from 34.1 mole % to 20 mole %.

A method of forming a bulk ceramic article that is resistant to erosion by halogen-containing plasmas, the method comprising:

• sintering a green body formed from a first granular powder comprising yttrium oxide and a second granular powder comprising zirconium oxide to form the bulk ceramic article, wherein the bulk ceramic article consists essentially of a solid solution of the yttrium oxide at a concentration from 35 mole % to less than 62.1 mole % and the zirconium oxide at a concentration from 65 mole % to greater than 37.9 mole %, and wherein the bulk ceramic article is a semiconductor processing chamber component selected from a group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner.