Directed self-assembly for copper patterning

A pattern of copper lines, comprising:

• copper lines having a pattern formed in a copper film by an etching process,
• wherein the etching process comprises:
• assembling an etch stack, wherein the etch stack includes a resist and a copper substrate, and wherein the copper substrate is annealed at a temperature above approximately 200° C.;
• lithographically patterning the resist to produce a template;
• forming a patterned block copolymer mask layer on the etch stack by directed self-assembly;
• etching portions of the block copolymer mask layer to produce a patterned block copolymer mask layer;
• and
• transferring a pattern formed by the template and the patterned block copolymer mask layer to the copper substrate to form the pattern of copper lines.

An electronic device, comprising:

• at least one complementary metal-oxide-semiconductor circuit;
• and
• copper lines, wherein the copper lines have a pattern formed in a process comprising:
• assembling an etch stack, wherein the etch stack includes a resist and a copper substrate, and wherein the copper substrate is annealed at a temperature above approximately 200° C.;
• lithographically patterning the resist to produce a template;
• forming a patterned block copolymer mask layer on the etch stack by directed self-assembly;
• etching portions of the block copolymer mask layer to produce a patterned layer;
• and
• transferring a pattern formed by the template and the patterned layer to the copper substrate to form the patterned copper lines.