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US 2019/0157104 A1Published application
Method of forming semiconductor device and semiconductor apparatus
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChun-Ti LU, Meng-Chin LEE, Fang-Liang LU, Chee-Wee LIU
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Abstract
A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.
Claims20
A method comprising:
- forming a doped region on a semiconductor substrate, wherein the doped region comprises an impurity therein;
- and
- performing a laser anneal process to the doped region with a process gas containing a dopant gas, wherein the dopant gas and the impurity comprise the same chemical element.
A method comprising:
- forming a doped source/drain region on a semiconductor substrate;
- and
- performing a laser anneal process to the doped source/drain region under a process pressure greater than about 1 atm.
An apparatus, comprising:
- a chamber having an inner spacer;
- a wafer stage in the inner space of the chamber;
- a laser source optically coupled to the inner space of the chamber;
- and
- a pressure control tool configured to pressurize the chamber.
2 more elements
Dependencies are inferred from the claim text.