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US 2019/0157084 A1Published application
Directional Deposition for Semiconductor Fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chun Huang, Ya-Wen Yeh, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
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Abstract
A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.
Claims20
A method, comprising:
- providing a mandrel formed on a first surface of a substrate, wherein the mandrel comprises a first sidewall and a second sidewall opposite to the first sidewall;
- and
- depositing a first material towards the first sidewall at an angle tilted from a normal of the first surface, resulting in a layer of the first material on the first sidewall but not on the second sidewall.
A method, comprising:
- providing a substrate in a deposition apparatus, wherein the substrate comprises a first surface having a mandrel formed thereon;
- forming plasma of a first material in the deposition apparatus;
- and
- obliquely depositing a layer of the first material towards the mandrel relative to a normal of the first surface using the plasma.
1 more element
A method, comprising:
- providing a substrate having a first surface, wherein a first hard mask layer is formed over the first surface and a second hard mask layer is formed over the first hard mask layer;
- forming a first pattern in the second hard mask layer, wherein the first pattern comprises a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and wherein the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall;
- and
- depositing a first material towards the first mandrel and the second mandrel such that a layer of the first material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.
1 more element
Dependencies are inferred from the claim text.