Semiconductor storage element and electronic device
AssigneeSony Corporation
InventorMasanori TSUKAMOTO
Life of this patent
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Abstract
[Object] To provide a semiconductor storage element and an electronic device whose reliability of stored information is enhanced. [Solution] The semiconductor storage element includes: a first transistor including a gate insulator film at least partially formed by ferroelectric material; a second transistor connecting with a gate of the first transistor at one of a source or a drain; and a third transistor connecting with a drain of the first transistor at one of a source or a drain. The semiconductor storage elements are arranged in a matrix, and each of the second and third transistors connects with a word line at a gate, and connects with a bit line at another one of the source or the drain.
Claims20
A semiconductor storage element comprising:
- a first transistor including a gate insulator film at least partially formed by ferroelectric material;
- a second transistor connecting with a gate of the first transistor at one of a source or a drain;
- and
- a third transistor connecting with a drain of the first transistor at one of a source or a drain,
- wherein the semiconductor storage elements are arranged in a matrix, and
- each of the second and third transistors connects with a word line at a gate, and connects with a bit line at another one of the source or the drain.
A semiconductor storage element comprising:
- a first transistor and a fourth transistor including gate insulator films at least partially formed by ferroelectric material;
- a second transistor connecting with a gate of the first transistor at one of a source or a drain, and connecting with a drain of the fourth transistor at another one of the source or the drain;
- and
- a third transistor connecting with a gate of the fourth transistor at one of a source or a drain, and connecting with a drain of the first transistor at another one of the source or the drain,
- wherein the semiconductor storage elements are arranged in a matrix, and
- each of the second and third transistors connects with a word line at a gate, and connects with a bit line at another one of the source or the drain.
An electronic device comprising:
- semiconductor storage elements each including
- a first transistor including a gate insulator film at least partially formed by ferroelectric material,
- a second transistor connecting with a gate of the first transistor at one of a source or a drain, and
- a third transistor connecting with a drain of the first transistor at one of a source or a drain,
- the semiconductor storage elements being arranged in a matrix,
- wherein each of the second and third transistors of the semiconductor storage element connects with a word line at a gate, and connects with a bit line at another one of the source or the drain.
Dependencies are inferred from the claim text.