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US 2019/0155528 A1Published application
Methods for phase-change memory array
AssigneeMicron Technology, Inc.
InventorsFerdinando Bedeschi, Claudio Resta, Marco Ferraro
Life of this patent
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Abstract
Methods of operating phase-change memory arrays are described. A method includes determining a pattern to be written to a phase-change memory array and executing, according to the pattern, two or more proper reset sequences on the phase-change memory array to write the pattern to the phase-change memory array. Another method includes executing a set sequence on a phase-change memory array and performing a proper read of the phase-change memory array to obtain a pattern derived from executing the set sequence.
Claims23
A method of operating a memory structure, comprising:
- determining a pattern to be written to the memory structure, the memory structure comprising multiple memory cells having a storage element including a chalcogenide material, the pattern comprising both real data bits representing data to be stored and fake data bits having a state that is unimportant to the data to be stored;
- and
- writing the pattern to a group of the memory cells.
A system, comprising:
- a memory array including multiple memory cells including storage elements comprising a chalcogenide material;
- one or more processors coupled to the memory array configured to determine a pattern to be written to a group of memory cells of the memory array, the pattern comprising both real data bits having a state representative of data to be stored, and fake data bits having a state that is unimportant to the data of the real data bits;
- and
- an internal state machine coupled to the memory array and configured to write the pattern to the group of memory cells of memory array.
1 more element
Dependencies are inferred from the claim text.