Substrate processing apparatus, method of adjusting parameters of coating module, and storage medium

A substrate processing apparatus for forming a coating film on a semiconductor wafer, comprising:

• a loading/unloading block into and from which a transfer container configured to accommodate a plurality of semiconductor wafers is loaded and unloaded;
• at least one coating module configured to apply a coating liquid to each of the plurality of semiconductor wafers taken out of the transfer container loaded into the loading/unloading block, and subsequently, in a state where the semiconductor wafer is rotated, discharge a removing liquid from a peripheral portion film removing nozzle toward a front surface inward of a beveled portion of the semiconductor wafer to remove the coating film formed on the peripheral portion;
• an imaging module including an imaging part configured to image the semiconductor wafer;
• a semiconductor wafer transfer mechanism configured to transfer the semiconductor wafer between the at least one coating module and the imaging module;
• a storage part;
• and
• a controller configured to:
• control the imaging module to image the front surface of the semiconductor water selected for a parameter adjustment among the plurality of semiconductor wafers, which is processed by the at least one coating module;
• obtain a degree of disturbance of a cut surface from an outer edge of the coating film to an inner edge of the beveled portion of the semiconductor wafer based on an imaging result obtained by the imaging module;
• determine whether or not the obtained degree of disturbance of the cut surface is a first allowable value;
• if the obtained degree of disturbance of the cut surface is determined to be not the first allowable value, reset a coating film drying time based on the obtained degree of disturbance of the cut surface and a first reference data indicating a relationship between a previously-prepared degree of disturbance of the cut surface and a previously-prepared coating film drying time required to dry the coating film prior to removing the coating film formed on the peripheral portion;
• control the at least one coating module to again perform the application of the coating liquid onto the semiconductor wafer for the parameter adjustment and the removal of the coating film formed on the peripheral portion;
• subsequently, determine whether or not the obtained degree of disturbance of the cut surface is the first allowable value;
• and if the obtained degree of disturbance of the cut surface is determined to be the first allowable value, store the reset coating film drying time in the storage part as a parameter for processing the semiconductor wafer as a product.

A method of adjusting a parameter during processing of a coating module in a substrate processing apparatus for forming a coating film on a semiconductor wafer,

• wherein the apparatus includes:
• a loading/unloading block into and from which a transfer container configured to accommodate a plurality of semiconductor wafers is loaded and unloaded;
• a coating module configured to apply a coating liquid to each of the plurality of semiconductor wafers taken out of the transfer container loaded into the loading/unloading block, and subsequently, in a state where the semiconductor wafer is rotated, discharge a removing liquid from a beveled portion film removing nozzle toward a beveled portion of the semiconductor wafer to remove the coating film formed on the beveled portion;
• an imaging module including an imaging part configured to image the semiconductor wafer;
• a semiconductor wafer transfer mechanism configured to transfer the semiconductor wafer between the coating module and the imaging module;
• and
• a storage part,
• the method comprising:
• imaging, by the imaging module, an outer end surface and a rear surface of the semiconductor wafer selected for a parameter adjustment among the plurality of semiconductor wafers, which is processed by the coating module;
• obtaining a height dimension of an outer edge of the coating film with respect to an inner edge of the beveled portion of the semiconductor wafer based on an imaging result obtained by the imaging module;
• determining whether or not the obtained height dimension is a first allowable value;
• if the obtained height dimension is determined to be not the first allowable value, resetting the number of revolutions of the semiconductor wafer based on the obtained height dimension and a first reference data indicating a relationship between a previously-prepared height dimension and a previously-prepared number of revolutions of the semiconductor wafer;
• controlling the coating module to again perform the application of the coating liquid onto the semiconductor wafer for the parameter adjustment and the removal of the coating film formed on the beveled portion;
• subsequently, determining whether or not the obtained height dimension is the first allowable value;
• and
• if the obtained height dimension is determined to be the first allowable value, storing the reset number of revolutions of the semiconductor wafer in the storage part as the parameter for processing the semiconductor wafer as a product.

A method of adjusting a parameter during processing of a coating module in a substrate processing apparatus for forming a coating film on a semiconductor wafer,

• wherein the apparatus includes:
• a loading/unloading block into and from which a transfer container configured to accommodate a plurality of semiconductor wafers is loaded and unloaded;
• at least one coating module configured to apply a coating liquid to each of the plurality of semiconductor wafers taken out of the transfer container loaded into the loading/unloading block, and subsequently, in a state where the semiconductor wafer is rotated, discharge a removing liquid from a peripheral portion film removing nozzle toward a front surface inward of a beveled portion of the semiconductor wafer to remove the coating film formed on the peripheral portion;
• an imaging module including an imaging part configured to image the semiconductor wafer;
• a semiconductor wafer transfer mechanism configured to transfer the semiconductor wafer between the at least one coating module and the imaging module;
• and
• a storage part,
• the method comprising:
• controlling the imaging module to image the front surface of the semiconductor wafer selected for a parameter adjustment among the plurality of semiconductor wafers, which is processed by the at least one coating module;
• obtaining a degree of disturbance of a cut surface from an outer edge of the coating film to an inner edge of the beveled portion of the semiconductor wafer based on an imaging result obtained by the imaging module;
• determining whether or not the obtained degree of disturbance of the cut surface is a first allowable value;
• if the obtained degree of disturbance of the cut surface is determined to be not the first allowable value, resetting a coating film drying time based on the obtained degree of disturbance of the cut surface and a first reference data indicating a relationship between a previously-prepared degree of disturbance of the cut surface and a previously-prepared coating film drying time required to dry the coating film prior to the removal of the coating film formed on the peripheral portion;
• controlling the at least one coating module to again perform the application of the coating liquid onto the semiconductor wafer for the parameter adjustment and the removal of the coating film formed on the peripheral portion;
• subsequently, determining whether or not the obtained degree of disturbance of the cut surface is the first allowable value;
• and
• if the obtained degree of disturbance of the cut surface is determined to be the first allowable value, storing the reset coating film drying time in the storage part as the parameter for processing the semiconductor wafer as a product.