Method for forming semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Ren ZI, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a assist layer over the material layer. The assist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, and a floating group bonded to the polymer backbone. The floating group includes carbon fluoride (CxFy). The method also includes forming a resist layer over the assist layer and patterning the resist layer.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a material layer over a substrate;
- forming a assist layer over the material layer, wherein the assist layer comprises:
- a polymer backbone;
- an acid labile group (ALG) bonded to the polymer backbone;
- and
- a floating group bonded to the polymer backbone, wherein the floating group comprises carbon fluoride (CxFy);
- forming a resist layer over the assist layer;
- and
- patterning the resist layer.
A method for forming a semiconductor structure, comprising:
- forming a material layer over a substrate;
- forming an underlying layer over the material layer, wherein the underlying layer comprises:
- a first polymer backbone;
- an acid labile group (ALG) bonded to the first polymer backbone, wherein the ALG comprises a polarity switch unit;
- and
- a floating group bonded to the first polymer backbone, wherein the floating group comprises carbon fluoride (CxFy);
- forming a resist layer over the underlying layer, wherein the resist layer comprises a second polymer;
- and
- exposing the resist layer by performing an exposure process, wherein the first polymer reacts with the second polymer to form an intermolecular force between the first polymer and the second polymer after the performing the exposure process.
The method for forming the semiconductor structure as claimed in claim 13, wherein the carbon fluoride (CxFy) comprises C2F5, CH2—CH2—C3F7, C(OH)(CF3)2, COOC4F9, CH2OC4F9 or COOC(OH)(CF3)2.
A method for forming a semiconductor structure, comprising:
- forming a material layer over a substrate;
- forming a bottom layer over the material layer;
- forming a middle layer over the bottom layer, wherein the middle layer comprises:
- a silicon containing inorganic polymer;
- a first polymer backbone;
- an acid labile group (ALG) bonded to the first polymer backbone, wherein the ALG comprises a polarity switch unit;
- and
- a floating group bonded to the first polymer backbone, wherein the floating group comprises carbon fluoride (CxFy);
- forming a resist layer over the middle layer;
- and
- patterning the resist layer.
Dependencies are inferred from the claim text.