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US 2019/0155140 A1Published application
Photomask and method of fabricating a photomask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Chang LEE, Ping-Hsun LIN, Yen-Cheng HO, Chih-Cheng LIN, Chia-Jen CHEN
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Abstract
A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
Claims20
A method of fabricating a photomask, comprising:
- selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank,
- wherein the pattern corresponds to a pattern of semiconductor device features.
A method of fabricating a photomask, comprising:
- forming a layer of optically modifiable material on a substrate;
- exposing the layer of optically modifiable material to radiation in a patternwise manner so that portions of the layer of optically modifiable material are exposed to the radiation and portions of the layer of optically modifiable material are not exposed to the radiation,
- wherein the portions of the layer of optically modifiable material exposed to radiation correspond to a pattern of semiconductor device features, and
- wherein the portions of the layer of optically modifiable material that are exposed to the radiation undergo a radiation-matter interaction, thereby changing an optical property of the portions that are exposed to the radiation.
1 more element
A photomask, comprising:
- an optically modifiable layer formed on a substrate;
- wherein the optically modifiable layer comprises a pattern of a first portion having a first optical property and a second portion having a modified first optical property, and
- wherein the pattern corresponds to a pattern of semiconductor device features.
Dependencies are inferred from the claim text.