Mirror via conductivity for dmd pixel

A method, comprising:

• forming a first layer comprising titanium on a metal layer;
• forming a first aluminum silicon layer on a surface of the first layer opposite the metal layer;
• etching the first layer to create a titanium-based pad;
• forming a torsion hinge in the metal layer, wherein the titanium-based pad is on the torsion hinge;
• depositing a sacrificial layer over the torsion hinge and titanium-based pad;
• forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium-based pad;
• depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via;
• and
• removing the sacrificial layer.

An apparatus, comprising:

• a semiconductor substrate;
• a torsion hinge formed on the semiconductor substrate;
• a titanium-based pad formed on the torsion hinge;
• a mirror layer including a via formed on the titanium nitride pad and rotatable by the torsion hinge.