Electrically conductive metal film for a semiconductor device

A semiconductor device comprising a device substrate and a metal film, wherein:

• (a) a device substrate top surface includes first and second non-recessed areal regions separated by a recessed areal region;
• (b) the metal film covers contiguously at least a portion of the first non-recessed areal region, at least a portion of the recessed areal region, at least a portion of the second non-recessed areal region, at least a portion of a first transition surface joining the recessed and first non-recessed areal regions, and at least a portion of a second transition surface joining the recessed and second non-recessed areal regions;
• and
• (c) the first transition surface includes one or more metallized portions over which (i) corresponding horizontal projections of surface-normal vectors of the first and second transition surfaces are not antiparallel, (ii) the surface-normal vector of the first transition surface is not parallel to the device substrate and is directed at a non-zero angle above the substrate top surface, and (iii) a corresponding portion of the metal film covers the first transition surface and is contiguous with adjacent portions of the metal film on the recessed and first non-recessed areal regions.