Method for manufacturing metal or metal oxide porous thin film having three-dimensional open network structure through pore size adjustment in dry process and metal or metal oxide porous thin film having threedimensional open network structuremanufactured by same
AssigneeKorea Institute of Industrial Technology
InventorsHo Nyun LEE, Hyun Jong KIM
Life of this patent
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Abstract
Disclosed is a metal or metal oxide porous thin film having a three-dimensional open-network structure, which is used for a gas sensor, a biosensor, a battery-capacitor, a fuel cell, a solar cell, a chemical catalyst, an antibacterial filter, etc., and, more particularly, to a metal or metal oxide porous thin film having a three-dimensional open-network structure, which is manufactured through a dry process instead of a wet process and has mesopores, and a method for manufacturing the same.
Claims26
A method for manufacturing a metal porous thin film having a three-dimensional open-network structure by controlling its pore size in a dry process, wherein the method of manufacturing a metal porous thin film having a three-dimensional open-network structure comprises:
- i) fixing a substrate to a metal porous thin film having a three-dimensional open-network structure deposition chamber and providing a vacuum state (s100);
- ii) injecting an inert gas into the chamber in a vacuum state and providing a constant pressure therein (s200);
- iii) setting the temperature of the substrate at 50° C. or below (s300);
- iv) increasing the temperature of an evaporation source, in which a metal sample is contained, thereby forming a metal vapor as a thermal evaporation process (s400);
- and
- v) depositing the evaporated metal vapor on top of the substrate (s500);
- wherein, for controlling the pore structure by controlling the kinetic energy of the evaporated metal vapor, the pressure in step (s200) for providing a constant pressure by injecting an inert gas into the chamber in a vacuum state is controlled in the range of 0.05 Torr to 10 Torr;
- and
- wherein, in step (s500) for depositing the evaporated metal vapor on top of the substrate, the temperature of the substrate is maintained at the same temperature with a temperature deviation of ±5° C. within the temperature of 50° C. or below;
- and
- wherein, in step (s500) for depositing the evaporated metal vapor on top of the substrate 200, the deposition rate is in the range of 0.1 μm/min to 5 μm/min.
A metal oxide porous thin film having a three-dimensional open-network structure by controlling its pore size,
- wherein, in the metal oxide porous thin film having an open-network structure, the film has a network structure in which nanowires or nanoparticles, which are comprised of metal oxides, are three-dimensionally connected, and comprises mesopores having a diameter of 1.0 nm to 100 nm;
- and
- the porous thin film is deposited at the deposition rate of 0.2 μm/min to 5 μm/min, so as to form a three-dimensional open-network porous structure and control the pore structure by controlling the kinetic energy of an evaporated metal or metal oxide vapor thereby minimizing the energy when they arrive at a substrate in an oxide state.
A metal oxide porous thin film having a three-dimensional open-network structure by controlling its pore size,
- wherein, in the metal oxide porous thin film having a three-dimensional open-network structure, the film has a network structure in which nanowires or nanoparticles, which are comprised of metal oxides, are three-dimensionally connected, and simultaneously comprises mesopores having a diameter of 1.0 nm to 100 nm and macropores having a diameter of 0.5 μm or higher;
- and
- the metal oxide porous thin film having a three-dimensional open-network structure is deposited at the deposition rate of 0.2 μm/min to 5 μm/min, so as to form a porous thin film having a three-dimensional open-network structure and control the pore structure by controlling the kinetic energy of an evaporated metal or metal oxide vapor thereby minimizing the energy when they arrive at a substrate in an oxide state.
A method for manufacturing a metal oxide porous thin film having a three-dimensional open-network structure by controlling its pore size in a dry process, wherein the method of manufacturing a metal porous thin film having a three-dimensional open-network structure comprises:
- i) fixing a substrate to a metal oxide porous thin film having a three-dimensional open-network structure deposition chamber and providing a vacuum state (s1000);
- ii) injecting an inert gas into the chamber in a vacuum state and providing a constant pressure therein (s2000);
- iii) setting the temperature of the substrate at 50° C. or below (s3000);
- iv) increasing the temperature of an evaporation source, in which a metal or metal oxide sample is contained, thereby forming a metal or metal oxide vapor as a thermal evaporation process (s4000);
- and
- v) reacting the evaporated metal or metal oxide vapor when oxygen is present in the chamber, whereas depositing the evaporated metal vapor on top of the substrate in an oxide state without reacting when oxygen is absent (s5000);
- wherein, in step (s2000) for injecting an inert gas into the chamber in a vacuum state and providing a constant pressure therein, the oxygen is able replace part or the entirety of the inert gas;
- for controlling the pore structure by controlling the kinetic energy of the evaporated metal or metal oxide vapor, the pressure in step (s2000) for providing a constant pressure by injecting an inert gas into the chamber in a vacuum state is controlled in the range of 0.1 Torr to 10 Torr;
- and
- wherein, in step (s5000), where the evaporated metal or metal oxide vapor is reacted when oxygen is present in the chamber, whereas the evaporated metal vapor is not reacted but deposited on top of the substrate in an oxide state when oxygen is absent, the temperature of the substrate is maintained at the same temperature with a temperature deviation of ±5° C. within the temperature of 50° C. or below;
- wherein, in step (s5000), where the evaporated metal or metal oxide vapor is reacted when oxygen is present in the chamber, whereas the evaporated metal vapor is not reacted but deposited on top of the substrate in an oxide state when oxygen is absent, the deposition rate is in the range of 0.2 μm/min to 5 μm/min;
- and
- the surface area of the metal oxide thin film being deposited is in the range of 30 m2/g to 600 m2/g.
Dependencies are inferred from the claim text.