Etchant and method of manufacturing display device by using the same
AssigneesSamsung Display Co., Ltd., Dongwoo Fine-Chem Co., Ltd.
InventorsJonghee PARK, Kitae KIM, Jinseock KIM, Beomsoo KIM, Sangtae KIM, Kyungbo SHIM, Giyong NAM, Youngjin YOON, Daesung LIM
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Abstract
An etchant includes: based on a total weight of the etchant, about 1 wt % to about 15 wt % of sulfurized peroxide, about 5 wt % to about 10 wt % of nitric acid, about 20 wt % to about 40 wt % of organic acid, about 0.05 wt % to about 5 wt % of ferric nitrate, about 0.1 wt % to about 5 wt % of ionic sequestrant, and 0.1 wt % to 5 wt % of corrosion inhibitor, wherein a remaining amount is deionized water.
Claims20
An etchant comprising:
- based on a total weight of the etchant,
- about 1 wt % to about 15 wt % of sulfurized peroxide;
- about 5 wt % to about 10 wt % of nitric acid;
- about 20 wt % to about 40 wt % of organic acid;
- about 0.05 wt % to about 5 wt % of ferric nitrate;
- about 0.1 wt % to about 5 wt % of ionic sequestrant;
- and
- about 0.1 wt % to about 5 wt % of corrosion inhibitor,
- wherein a remaining amount is deionized water.
A method of manufacturing a display device, the method comprising:
- forming a thin film transistor on a substrate;
- forming a planarization layer covering the thin film transistor;
- and
- forming a first electrode, electrically coupled to the thin film transistor, on the planarization layer,
- wherein the first electrode has a structure in which a first conductive layer, a second conductive layer comprising silver, and a third conductive layer are stacked, wherein the first conductive layer and the third conductive layer are transparent or semitransparent electrode layers, and
- wherein the first electrode is etched and patterned with an etchant, wherein the etchant comprises:
- based on a total weight of the etchant,
- about 1 wt % to about 15 wt % of sulfurized peroxide;
- about 5 wt % to about 10 wt % of nitric acid;
- about 20 wt % to about 40 wt % of organic acid;
- about 0.05 wt % to about 5 wt % of ferric nitrate;
- about 0.1 wt % to about 5 wt % of ionic sequestrant;
- about 0.1 wt % to about 5 wt % of corrosion inhibitor, and
- wherein a remaining amount is deionized water.
Dependencies are inferred from the claim text.